11N60 FCPF11N60 FQD11N60C 11NM60 11NM60ND FQD11N60 To220 Mosfet N

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Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 10 A
Rds On – Drain-Source Resistance: 370 mOhms
Vgs th – Gate-Source Threshold Voltage: 3 V
Vgs – Gate-Source Voltage: 25 V
Qg – Gate Charge: 16.5 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 25 W
Channel Mode: Enhancement
Transistor Type: 1 N-Channel
Brand: STMicroelectronics
Fall Time: 9.5 ns
Product Type: MOSFET
Rise Time: 6.3 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 11.7 ns
Unit Weight: 0.067021 oz

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