Transistor Mosfet K3878 2sk3878 900v 9a Npn Original

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Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 900 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 1 Ohms
Vgs – Gate-Source Voltage: 30 V
Qg – Gate Charge: 60 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Packaging: Tube
Height: 20 mm
Length: 15.5 mm
Series: 2SK3878
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Toshiba
Forward Transconductance – Min: 7 S
Fall Time: 20 ns
Pd – Power Dissipation: 150 W
Rise Time: 25 ns
Factory Pack Quantity: 50
Unit Weight: 7 g

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