K10a60d Tk10a60d Transistor N 600v 10a To-220

K10a60d Tk10a60d Transistor N 600v 10a To-220 Original

Manufacturer: Toshiba Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220SIS-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds – Drain-Source Breakdown Voltage: 600 V Id – Continuous Drain Current: 10 A Rds On – Drain-Source Resistance: 750 mOhms Vgs th – Gate-Source Threshold Voltage: 2 V Vgs – Gate-Source Voltage: 10 V Qg – Gate Charge: 25 nC Maximum Operating Temperature: + 150 C Configuration: Single Pd – Power Dissipation: 45 W Channel Mode: Enhancement Tradename: DTMOSIV Height: 15 mm Length: 10 mm Series: TK10A60D Transistor Type: 1 N-Channel Type: Field Effect Transistor Silicon N Channel MOS Type Width: 4.5 mm Brand: Toshiba Forward Transconductance – Min: 1.5 S Fall Time: 15 ns Rise Time: 22 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 100 ns Typical Turn-On Delay Time: 55 ns Unit Weight: 6 g

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